Fabrication of Nano-Gapped Single-Electron Transistors for Transport Studies of Individual Single-Molecule Magnets

Abstract

Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductance through a single Mn12(3-thiophenecarboxylate) displays the coulomb blockade effect with several excitations within +/- 40 meV.

10 pages, 5 figures

References in corpus (3)

• Inelastic electron tunneling via molecular vibrations in single-molecule transistors
• Berry Phase Oscillations of the Kondo Effect in Single-Molecule Magnets
• Transport in single-molecule transistors: Kondo physics and negative differential resistance

Cited by in corpus (7)

• Spin Polarized Transport Through a Single-Molecule Magnet: Current-Induced Magnetic Switching
• Spin effects in transport through single-molecule magnets in the sequential and cotunneling regimes
• Spin-bias driven magnetization reversal and nondestructive detection in a single molecular magnet
• Spin Diode Behavior in Transport Through Single-Molecule Magnets
• Effects of Intrinsic Spin-Relaxation in Molecular Magnets on Current-Induced Magnetic Switching
• Memristive properties of single-molecule magnets
• Renormalization of the tunnel splitting in a rotating nanomagnet