Influence of trigonal warping on interference effects in bilayer graphene

Abstract

Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to a trigonal warping, which suppresses the weak localization effect. We show that weak localisation in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.

4 pages, 1 figure

References in corpus (1)

• Electric Field Effect in Atomically Thin Carbon Films

Cited by in corpus (5)

• Electronic properties of bilayer and multilayer graphene
• Boltzmann transport and residual conductivity in bilayer graphene
• Role of the trigonal warping on the minimal conductivity of bilayer graphene
• Scattering of charge carriers by point defects in bilayer graphene
• Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density