Numerical analysis of the quantum dots on off-normal incidence ion sputtered surfaces

Abstract

We implement substrate rotation in a 2+1 dimensional solid-on-solid model of ion beam sputtering of solid surfaces. With this extension of the model, we study the effect of concurrent rotation, as the surface is sputtered, on possible topographic regions of surface patterns. In particular we perform a detailed numerical analysis of the time evolution of dots obtained from our Monte Carlo simulations at off-normal-incidence sputter erosion. We found the same power-law scaling exponents of the dot characteristics for two different sets of ion-material combinations, without and with substrate rotation.

arXiv comment9 pages, 14 figures

References in corpus (7)

• Dynamic Scaling of Ion-Sputtered Surfaces
• Production of ordered silicon nanocrystals by low-energy ion sputtering
• Quantum Dot and Hole Formation in Sputter Erosion
• Noisy Kuramoto-Sivashinsky equation for an erosion model
• Propagation of Ripples in Monte Carlo Models of Sputter Induced Surface Morphology
• Long-Time Effects in a Simulation Model of Sputter Erosion
• Morphological regions and oblique incidence dot formation in a model of surface sputtering

Cited by in corpus (6)

• Structural and Optoelectronic Behaviour of Copper Doped Cs2AgInCl6 Double Perovskite: A DFT Investigation
• A Monte Carlo study of surface sputtering by dual and rotated ion beams
• Additional scaling regions of ion-sputtered surfaces
• Discretisation of a stochastic continuum equation of ion-sputtered surfaces
• Theoretical monitoring of energy transport on solid surfaces at nano-metric scales
• Nanometric Scale Surface science and the Markov chain Monte Carlo simulation of disordered systems