Interplay between s-d exchange interaction and Rashba effect: spin-polarized transport

Abstract

We investigate the spin-polarized transport properties of a two-dimensional electron gas in a n-type diluted magnetic narrow gap semiconductor quantum well subjected to a perpendicular magnetic and electric field. Interesting beating patterns in the magneto resistance are found which can be tuned significantly by varying the electric field. A resonant enhancement of spin-polarized current is found which is induced by the competition between the s-d exchange interaction and the Rashba effect [Y. A. Bychkov and E. I. Rashba, J. Phys. C 17, 6039 (1984)].

4 pages, 3 figures, Appl. Phys. Lett. (in press)

References in corpus (5)

• Spin Hall effect
• Dissipationless Quantum Spin Current at Room Temperature
• Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system
• Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
• Spin susceptibilities, spin densities and their connection to spin-currents

Cited by in corpus (6)

• Spin polarization control via magnetic barriers and spin-orbit effects
• Emergence of pressure-induced metamagnetic-like state in Mn-doped CdGeAs2 chalcopyrite
• Ultrafast spin dynamics in II-VI diluted magnetic semiconductors with spin-orbit interaction
• Spin states and persistent currents in a mesoscopic ring with an embedded magnetic impurity
• Theory of spin polarization in mesoscopic spin-orbit coupling systems
• Tuning of few-electron states and optical absorption anisotropy in GaAs quantum rings