Bandwidth-controlled Mott transition in I. Optical studies of localized charge excitations
arXiv:cond-mat/0608090 · doi:10.1103/PhysRevB.76.165113
Abstract
Infrared reflection measurements of the half-filled two-dimensional organic conductors -(BEDT-TTF)Cu[N(CN)]BrCl were performed as a function of temperature ( K) and Br-substitution (, 40%, 73%, 85%, and 90%) in order to study the metal-insulator transition. We can distinguish absorption processes due to itinerant and localized charge carriers. The broad mid-infrared absorption has two contributions: transitions between the two Hubbard bands and intradimer excitations from the charges localized on the (BEDT-TTF) dimer. Since the latter couple to intramolecular vibrations of BEDT-TTF, the analysis of both electronic and vibrational features provides a tool to disentangle these contributions and to follow their temperature and electronic-correlations dependence. Calculations based on the cluster model support our interpretation.
12 pages, 12 figures
References in corpus (1)
Cited by in corpus (4)
- Bandwidth-controlled Mott transition in kappa-(BEDT-TTF)2Cu[N(CN)2]Br{x}Cl{1-x}: Optical studies of correlated carriers
- Quasiparticles at the verge of localization near the Mott metal-insulator transition in a two-dimensional material
- Optical probe of carrier doping by X-ray irradiation in organic dimer Mott insulator -(BEDT-TTF)Cu[N(CN)Cl
- DC and high-frequency conductivity of the organic metals beta"-(BEDT-TTF)2SF5RSO3 (R = CH2CF2 and CHF)