High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly

Abstract

High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition (CVD). Furthermore, the integration of hydrophobic self-assembled monolayers (SAMs) in the device structure eliminates the primary source of gating hysteresis in SWNT-FETs, which leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.

13 pages, 5 figures

References in corpus (5)

• Carbon Nanotubes as Schottky Barrier Transistors
• Non-volatile molecular memory elements based on ambipolar nanotube field effect transistors
• Self-aligned carbon nanotube transistors with charge transfer doping
• Electrostatic Engineering of Nanotube Transistors for Improved Performance
• Electronic Devices Based on Purified Carbon Nanotubes Grown By High Pressure Decomposition of Carbon Monoxide

Cited by in corpus (3)

• Graphene on a hydrophobic substrate: Doping reduction and hysteresis suppression under ambient conditions
• High-Yield of Memory Elements from Carbon Nanotube Field-Effect Transistors with Atomic Layer Deposited Gate Dielectric
• Recent progress in parallel fabrication of individual single walled carbon nanotube devices