Long range scattering effects on spin Hall current in $p$-type bulk semiconductors

Abstract

Employing a nonequilibrium Green's function approach, we examine the effects of long-range hole-impurity scattering on spin-Hall current in $p$-type bulk semiconductors within the framework of the self-consistent Born approximation. We find that, contrary to the null effect of short-range scattering on spin-Hall current, long-range collisions do produce a nonvanishing contribution to the spin-Hall current, which is independent of impurity density in the diffusive regime and relates only to hole states near the Fermi surface. The sign of this contribution is opposite to that of the previously predicted disorder-independent spin-Hall current, leading to a sign change of the total spin-Hall current as hole density varies. Furthermore, we also make clear that the disorder-independent spin-Hall effect is a result of an interband polarization directly induced by the dc electric field with contributions from all hole states in the Fermi sea.

9 pages, 1 figure

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Cited by in corpus (1)

• Anomalous Hall effect in Rashba two-dimensional electron systems based on narrow-band semiconductors: side-jump and skew scattering mechanisms