Hysteretic memory effects in disordered magnets
arXiv:cond-mat/0509515 · doi:10.1103/PhysRevB.74.020405
Abstract
We study the return point as well as the complementary point memory effects numerically with paradigmatic models for random magnets and show that already simple systems with Ising spin symmetry can reproduce the experimental results of Pierce et al. where both memory effects become more pronounced for increasing disorder and return point memory is always better than complementary point memory.
4 pages, 5 figures
References in corpus (6)
- Hysteresis and hierarchies: dynamics of disorder-driven first-order phase transformations
- Disorder-induced microscopic magnetic memory
- Self-organized criticality in the hysteresis of the Sherrington - Kirkpatrick model
- Reversal-Field Memory in the Hysteresis of Spin Glasses
- Hysteresis loops of magnetic thin films with perpendicular anisotropy
- Mechanism for nonequilibrium symmetry breaking and pattern formation in magnetic films
Cited by in corpus (8)
- Hysteresis and Return Point Memory in Artificial Spin Ice Systems
- Perspective on Reversible to Irreversible Transitions in Periodic Driven Many Body Systems and Future Directions For Classical and Quantum Systems
- The structure of state transition graphs in hysteresis models with return point memory: I. General Theory
- Non-converging hysteretic cycles in random spin networks
- Deep Spin-Glass Hysteresis Area Collapse and Scaling in the Ising Model
- A catastrophic approach to designing interacting hysterons
- Disorder-induced magnetic memory: Experiments and theories
- Beyond conventional skyrmions in synthetic antiferromagnets