Disorder-induced microscopic magnetic memory

Abstract

Using coherent x-ray speckle metrology, we have measured the influence of disorder on major loop return point memory (RPM) and complementary point memory (CPM) for a series of perpendicular anisotropy Co/Pt multilayer films. In the low disorder limit, the domain structures show no memory with field cycling--no RPM and no CPM. With increasing disorder, we observe the onset and the saturation of both the RPM and the CPM. These results provide the first direct ensemble-sensitive experimental study of the effects of varying disorder on microscopic magnetic memory and are compared against the predictions of existing theories.

4 pages, 4 figures. Accepted for publication in Physical Review Letters in Nov. 2004

References in corpus (3)

• Quasistatic x-ray speckle metrology of microscopic magnetic return point memory
• Numerical simulations of two dimensional magnetic domain patterns
• Hysteresis and Avalanches in the Random Anisotropy Ising Model

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