Generation of spin currents via Raman scattering

Abstract

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zincblende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.

References in corpus (5)

• Experimental observation of the spin-Hall effect in a two dimensional spin-orbit coupled semiconductor system
• Experimental Realization of a Quantum Spin Pump
• Pure spin current from one-photon absorption of linearly polarized light in noncentrosymmetric semiconductors
• Spin susceptibilities, spin densities and their connection to spin-currents
• Spin current injection by intersubband transitions in quantum wells

Cited by in corpus (11)

• Spin Hall Effect in Atoms
• Chiral Spin Mode on the Surface of a Topological Insulator
• Deduction of Pure Spin Current from Spin Linear and Circular Photogalvanic Effect in Semiconductor Quantum Wells
• Electric field-induced spin textures in a superlattice with Rashba and Dresselhaus spin-orbit coupling
• Ultrafast extrinsic spin-Hall currents
• Bistable Spin Currents from Quantum Dots Embedded in a Microcavity
• Raman Photogalvanic Effect: photocurrent at inelastic light scattering
• Terahertz radiation-induced conductivity, Kerr and Faraday angles, and spin textures in a two-dimensional electron gas with spin-orbit coupling subjected to a high magnetic field and periodic potential
• Quantum states and linear response in dc and electromagnetic fields for charge current and spin polarization of electrons at Bi/Si interface with giant spin-orbit coupling
• Quantum bistability and spin current shot noise of a single quantum dot coupled to an optical microcavity
• Strong electron spin-Hall effect by a coherent optical potential