Influence of doping level on the Hall coefficient and on the thermoelectric power in $Nd_{2-x}Ce_xCuO_4$

C. H. Wang; G. Y. Wang; T. Wu; Z. Feng; X. G. Luo; X. H. Chen

doi:10.1103/PhysRevB.72.132506

paper

Influence of doping level on the Hall coefficient and on the thermoelectric power in $N d_{2 - x} C e_{x} C u O_{4}$

arXiv:cond-mat/0506681 · doi:10.1103/PhysRevB.72.132506

Abstract

Hall coefficient $R_{H}$ and thermoelectric power TEP are studied systematically in the single crystals $N d_{2 - x} C e_{x} C u O_{4 + δ}$ (NCCO) with different x from underdoped to overdoped regime. With increasing doping level, both $R_{H}$ and TEP decrease and change their sign from negative to positive. A striking feature is that the temperature dependence of the Hall angle follows a $T^{4}$ behavior in the underdoped regime, while a $T^{2}$ in the overdoped regime. These behaviors are closely related to the evolution of Fermi surface with doping level observed by ARPES.

4 pages, 4 figures, to be published in PRB

Influence of doping level on the Hall coefficient and on the thermoelectric power in Nd2−x​Cex​CuO4​

Abstract

Influence of doping level on the Hall coefficient and on the thermoelectric power in $N d_{2 - x} C e_{x} C u O_{4}$