Influence of doping level on the Hall coefficient and on the thermoelectric power in $N{d}_{2-x}C{e}_{x}Cu{O}_4$

Abstract

Hall coefficient $R_H$ and thermoelectric power TEP are studied systematically in the single crystals $N{d}_{2-x}C{e}_{x}Cu{O}_{4+\delta }$ (NCCO) with different x from underdoped to overdoped regime. With increasing doping level, both $R_H$ and TEP decrease and change their sign from negative to positive. A striking feature is that the temperature dependence of the Hall angle follows a $T^4$ behavior in the underdoped regime, while a $T^2$ in the overdoped regime. These behaviors are closely related to the evolution of Fermi surface with doping level observed by ARPES.

arXiv comment4 pages, 4 figures, to be published in PRB

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• Evidence for a quantum phase transition in electron-doped Pr${}_{2-x}$Ce${}_x$CuO${}_{4-\delta }$ from Thermopower measurements
• Hidden Fermi-liquid charge transport in the antiferromagnetic phase of the electron-doped cuprates
• A crossover in phase diagram of NaFe${}_{1-x}$Co${}_x$As determined by electronic transport measurements
• Intrinsic electron-doping in nominal "non-doped" superconducting (La,Y)${}_2$CuO${}_4$ thin films grown by dc magnetron sputtering
• Origin of superconductivity in nominally "undoped" T'-La${}_{2-x}$Y${}_x$CuO${}_4$ films