Raising Bi-O bands above the Fermi energy level of hole-doped BiSrCaCuO and other cuprate superconductors
arXiv:cond-mat/0506094 · doi:10.1103/PhysRevLett.96.097001
Abstract
The Fermi surface (FS) of BiSrCaCuO (Bi2212) predicted by band theory displays Bi-related pockets around the point, which have never been observed experimentally. We show that when the effects of hole doping either by substituting Pb for Bi or by adding excess O in Bi2212 are included, the Bi-O bands are lifted above the Fermi energy () and the resulting first-principles FS is in remarkable accord with measurements. With decreasing hole-doping the Bi-O bands drop below and the system self-dopes below a critical hole concentration. Computations on other Bi- as well as Tl- and Hg-based compounds indicate that lifting of the cation-derived band with hole doping is a general property of the electronic structures of the cuprates.
4 pages, 4 figures; PRL (2006, in press)