Intervalley-Scattering Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures

Abstract

We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where elastic intervalley scattering dominates over diffusion. Electron heating experiments on heavily doped n-type Si samples with electron concentration in the range $3.5-16.0\times 10^{25}$ m${}^{-3}$ are performed at sub-1 K temperatures. We find a good agreement between the theory and the experiment.

v2: Notations changed: ${\Delta }_i$ --> $\delta v_i$, ${\tau }_{eff}$ removed. Eq. (1) changed, Eq. (2) added and complete derivation of Eq. (3) included. Some further discussion about single vs. many valley added [3rd paragraph after Eq. (7)]. End notes removed and new reference added [Kragler and Thomas]. Typos in references corrected

References in corpus (1)

• Deformation Electron-Phonon Coupling in Disordered Semiconductors and Nanostructures

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