Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors

Abstract

We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of Copper- and Iron-Phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches 0.3 cm${}^2$/Vs in both materials. The highest mobility for electrons is observed for Iron-Phthalocyanines and is approximately one order of magnitude lower. Our measurements indicate that these values are limited by extrinsic contact effects due to the transistor fabrication and suggest that considerably higher values for the electron and hole mobility can be achieved in these materials.

arXiv commentSubmitted to APL

References in corpus (6)

• Intrinsic charge transport on the surface of organic semiconductors
• Organic Single-Crystal Field-Effect Transistors
• Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator
• Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
• Field-Effect Transistors on Tetracene Single Crystals
• Single-crystal field-effect transistors based on copper phthalocyanine

Cited by in corpus (6)

• Metallic conduction at organic charge-transfer interfaces
• Tuneable electronic properties in graphene
• Electronic and magnetic properties of molecule-metal interfaces: transition metal phthalocyanines adsorbed on Ag(100)
• Magnetic, electronic and vibrational properties of metal and fluorinated metal phthalocyanines
• Spatially, Temporally and Polarization-Resolved Photoluminescence Exploration of Excitons in Crystalline Phthalocyanine Thin Films
• Voltage induced switching dynamics of a coupled spin pair in a molecular junction