Magnetic-field induced band-structure change in CeBiPt
arXiv:cond-mat/0502279 · doi:10.1103/PhysRevLett.95.086403
Abstract
We report on a field-induced change of the electronic band structure of CeBiPt as evidenced by electrical-transport measurements in pulsed magnetic fields. Above ~25 T, the charge-carrier concentration increases nearly 30% with a concomitant disappearance of the Shubnikov-de Haas signal. These features are intimately related to the Ce 4f electrons since for the non-4f compound LaBiPt the Fermi surface remains unaffected. Electronic band-structure calculations point to a 4f-polarization-induced change of the Fermi-surface topology.
4 pages, 4 figures
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