Surface acoustic wave-induced electroluminescence intensity oscillation in planar light-emitting devices

Abstract

Electroluminescence emission from surface acoustic wave-driven light-emitting diodes (SAWLEDs) is studied by means of time-resolved techniques. We show that the intensity of the SAW-induced electroluminescence is modulated at the SAW frequency (~1 GHz), demonstrating electron injection into the p-type region synchronous with the SAW wavefronts.

4 pages, 3 figures

References in corpus (3)

• Enhanced quantized current driven by surface acoustic waves
• High-performance planar light-emitting diode
• Surface-acoustic-wave driven planar light-emitting device

Cited by in corpus (9)

• Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode
• Transporting and manipulating single electrons in surface-acoustic-wave minima
• Ultrafast laser pulses to detect and generate fast thermo-mechanical transients in matter
• Acoustoelectric luminescence from a field-effect n-i-p lateral junction
• Quantised Charge Transport driven by a Surface Acoustic Wave in induced unipolar and bipolar junctions
• Surface-acoustic-wave-driven luminescence from a lateral p-n junction
• Acoustic charge transport in n-i-n three terminal device
• Anti-bunched photons from a lateral light-emitting diode
• Lasing in planar semiconductor diodes