Acoustoelectric luminescence from a field-effect n-i-p lateral junction
arXiv:0903.1230 · doi:10.1063/1.3106108
Abstract
A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon-source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.
References in corpus (9)
- Security Aspects of Practical Quantum Cryptography
- Review: Semiconductor Quantum Light Sources
- High Frequency Acousto-electric Single Photon Source
- High-performance planar light-emitting diode
- Surface-acoustic-wave driven planar light-emitting device
- Surface acoustic wave-induced electroluminescence intensity oscillation in planar light-emitting devices
- Surface-acoustic-wave-driven luminescence from a lateral p-n junction
- Mesoscopic structures and 2D hole systems in fully field effect controlled heterostructures
- Acoustic charge transport in n-i-n three terminal device
Cited by in corpus (6)
- Single-photon Emission from an Acoustically-driven Lateral Light-emitting Diode
- Coherent transport of atomic wave packets in amplitude-modulated vertical optical lattices
- Transporting and manipulating single electrons in surface-acoustic-wave minima
- Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures
- Quantised Charge Transport driven by a Surface Acoustic Wave in induced unipolar and bipolar junctions
- Lasing in planar semiconductor diodes