The effect of impurities on the mobility of single crystal pentacene

Abstract

We have obtained a hole mobility for the organic conductor pentacene of 35 cm2/Vs at room temperature increasing to 58 cm2/Vs at 225K. These high mobilities result from a purification process in which 6,13-pentacenequinone was removed by vacuum sublimation. The number of traps is reduced by two orders of magnitude compared with conventional methods. The temperature depandence of the mobility is consistent with the band model for electronic transport.

5 pages, 3 figures

References in corpus (2)

• Field Effect Transistors on Rubrene Single Crystals with Parylene Gate Insulator
• Limit of Field Effect Mobility on Pentacene Single Crystal

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