Inter-edge strong-to-weak scattering evolution at a constriction in the fractional quantum Hall regime
arXiv:cond-mat/0403318 · doi:10.1103/PhysRevLett.93.046801
Abstract
Gate-voltage control of inter-edge tunneling at a split-gate constriction in the fractional quantum Hall regime is reported. Quantitative agreement with the behavior predicted for out-of-equilibrium quasiparticle transport between chiral Luttinger liquids is shown at low temperatures at specific values of the backscattering strength. When the latter is lowered by changing the gate voltage the zero-bias peak of the tunneling conductance evolves into a minimum and a non-linear quasihole-like characteristic emerges. Our analysis emphasizes the role of the local filling factor in the split-gate constriction region.
4 pages, 4 figures
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