Acoustic Phonon-Assisted Resonant Tunneling via Single Impurities

Abstract

We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the $I(V)$ characteristics measured at 30mK, the contribution of individual donors is resolved and the fingerprints of phonon assistance in the tunneling process are seen. The latter is confirmed by detailed analysis of the tunneling rates and the modeling of the resonant tunneling contribution to the current. Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge singularities are observed.

arXiv commentaccepted in Phys. Rev. B

References in corpus (4)

• Spontaneous Emission Spectrum in Double Quantum Dot Devices
• Resonant tunneling through ultrasmall quantum dots: zero-bias anomalies, magnetic field dependence, and boson-assisted transport
• Spectroscopy of Local Density of States Fluctuations in a Disordered Conductor (Experiment)
• Inelastic tunneling in a double quantum dot coupled to a bosonic environment

Cited by in corpus (4)

• Fermi Edge Singularities in Transport through Quantum Dots
• Spin splitting of X-related donor impurity states in an AlAs barrier
• Fermi-edge singularity in the vicinity of the resonant scattering condition
• The photon absorption edge in superconductors and gapped 1D systems