Effects of spin imbalance on the electric-field driven quantum dissipationless spin current in -doped Semiconductors
arXiv:cond-mat/0401231 · doi:10.1103/PhysRevB.70.235323
Abstract
It was proposed recently by Murakami et al. [Science \textbf{301}, 1348(2003)] that in a large class of -doped semiconductors, an applied electric field can drive a quantum dissipationless spin current in the direction perpendicular to the electric field. In this paper we investigate the effects of spin imbalance on this intrinsic Hall effect. We show that in a real sample with boundaries, due to the presence of spin imbalance near the edges of the sample, the spin Hall conductivity is not a constant but a sensitively - quantity, and due to this fact, in order to take the effects of spin imbalance properly into account, a microscopic calculation of both the quantum dissipationless spin Hall current and the spin accumulation on an equal footing is thus required. Based on such a microscopic calculation, a detailed discussion of the effects of spin imbalance on the intrinsic spin Hall effect in thin slabs of -doped semiconductors are presented.
8 pages, 2 figures, An extended version with detailed calculations To appear in Phys. Rev. B
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- Current-induced Spin Polarization in Two-Dimensional Hole Gas
- Electric generation of spin in crystals with reduced symmetry
- Geometrical phase effects on the Wigner distribution of Bloch electrons
- Spin Hall Conductance of the Two Dimensional Hole Gas in a Perpendicular Magnetic Field
- Some symmetry properties of spin currents and spin polarizations in multi-terminal mesoscopic spin-orbit coupled systems
- Local spin density in two-dimensional electron gas with hexagonal boundary