Comparative study of in situ and ex situ MgB2 films deposited by pulsed laser deposition
arXiv:cond-mat/0311556 · doi:10.1088/0953-2048/17/9/004
Abstract
Two types of MgB2 films were prepared by pulsed laser deposition (PLD) with in situ and ex situ annealing processes respectively. Significant differences in properties between the two types of films were found. The ex situ MgB2 film has a Tc of 38.1K, while the in situ film has a depressed Tc of 34.5K. The resistivity at 40K for the in situ film is larger than that of the ex situ film by a factor of 6. The residual resistivity ratios (RRR) are 1.1 and 2.1 for the in situ and ex situ films respectively. The Jc-H curves of the in situ film show a much weaker field dependence than those of the ex situ film, attributable to stronger flux pinning in the in situ film. The small-grain feature and high oxygen level may be critical for the significant improvement of Jc in the in situ annealed MgB2 film.
6 pages, 6 figures
References in corpus (10)
- Thin Film Magnesium Boride Superconductor with Very High Critical Current Density and Enhanced Irreversibility Field
- MgB2 superconducting thin films with a transition temperature of 39 Kelvin
- Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering
- Electronic Structure, Electron-Phonon Coupling, and Multiband Effects in MgB2
- Superconducting Mg-B films by pulsed laser deposition in an in-situ two-step process using multi-component targets
- Critical Current Density and Resistivity of MgB2 Films
- Superconducting magnesium diboride films with Tc \approx 24K grown by pulsed laser deposition with in-situ anneal
- Growth of superconducting MgB2 thin films via postannealing techniques
- In situ annealing of superconducting MgB2 films prepared by pulsed laser deposition
- Effective Vortex Pinning in MgB2 thin films