Quantum Description of Shuttle Instability in Nanoelectromechanical Single Electron Transistor
arXiv:cond-mat/0311104 · doi:10.1103/PhysRevB.68.033106
Abstract
The voltage dependence of nanoelectromechanical effects in a system where the quantized mechanical vibrations of a quantum dot are coupled to coherent tunneling of electrons through a single level in the dot is studied. It is found that there are two different regimes depending on the value of an applied voltage. If the bias voltage is below a certain threshold value, then the state of the mechanical subsystem is located near its ground state. If the bias voltage is above the threshold value then the system becomes unstable which manifests itself in the expectation value of the displacement being an oscillating function of time with an exponentially increasing amplitude. This can be interpreted as a shuttle instability in a quantum regime.
5 pages,1 figure
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- Vibration-induced Kondo tunneling through metal-organic complexes with even electron occupation number
- Charge-vibration interaction effects in normal-superconductor quantum dots
- Mechanically Induced Thermal Breakdown in Magnetic Shuttle Structures
- Enhancing the conductance of a two-electron nanomechanical oscillator
- Magnetopolaronic effects in electron transport through a single-level vibrating quantum dot
- Current and current fluctuations in quantum shuttles
- Impact of van der Waals forces on the classical shuttle instability
- Resonant polaron-assisted tunneling of strongly interacting electrons through a single-level vibrating quantum dot
- Electronic spin working mechanically
- Polaronic effects in electron shuttling
- Quantum Teleportation in One-Dimensional Quantum Dots System