An accurate description of quantum size effects in InP nanocrystallites over a wide range of sizes

Abstract

We obtain an effective parametrization of the bulk electronic structure of InP within the Tight Binding scheme. Using these parameters, we calculate the electronic structure of InP clusters with the size ranging upto 7.5 nm. The calculated variations in the electronic structure as a function of the cluster size is found to be in excellent agreement with experimental results over the entire range of sizes, establishing the effectiveness and transferability of the obtained parameter strengths.

arXiv comment9 pages, 3 figures, pdf file available at http://sscu.iisc.ernet.in/~sampan/publications.html

References in corpus (3)

• Influence of quantum confinement on the ferromagnetism of (Ga,Mn)As diluted magnetic semiconductor
• Realistic Tight Binding Model for the Electronic Structure of II-VI Semiconductors
• Estimates of electronic interaction parameters for La$M$O${}_3$ compounds ($M$=Ti-Ni) from ab-initio approaches

Cited by in corpus (3)

• Evolution of the electronic structure with size in II-VI semiconductor nanocrystals
• Electronic structure of and Quantum size effect in III-V and II-VI semiconducting nanocrystals using a realistic tight binding approach
• Linear scaling approach for atomistic calculation of excitonic properties of 10-million-atom nanostructures