Influence of quantum confinement on the ferromagnetism of (Ga,Mn)As diluted magnetic semiconductor
arXiv:cond-mat/0111475 · doi:10.1021/nl025516q
Abstract
We investigate the effect of quantum confinement on the ferromagnetism of diluted magnetic semiconductor GaMnAs using a combination of tight-binding and density functional methods. We observe strong majority-spin Mn -As hybridization, as well as half metallic behavior, down to sizes as small as 20 Åin diameter. Below this critical size, the doped holes are self-trapped by the Mn-sites, signalling both valence and electronic transitions. Our results imply that magnetically doped III-V nanoparticles will provide a medium for manipulating the electronic structure of dilute magnetic semiconductors while conserving the ferromagnetic properties and even enhancing it in certain size regime.
4 pages, 3 figures
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