Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

Abstract

We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows to fabricate robust in-plane gates and Cr/Au top gate electrodes on the same device for optimal controllability. This is illustrated by the tunability of the interdot coupling in our device. We describe our fabrication and alignment scheme in detail and demonstrate the tunability in low-temperature transport measurements.

4 pages, 3 figures

References in corpus (8)

• Quantum Computation with Quantum Dots
• Electron transport through double quantum dots
• Hilbert space structure of a solid state quantum computer: two-electron states of a double quantum dot artificial molecule
• Coherent coupling of two quantum dots embedded in an Aharonov-Bohm ring
• Scaling Of The Coulomb Energy Due To Quantum Fluctuations In The Charge Of A Quantum Dot
• Electron Spins in Artificial Atoms and Molecules for Quantum Computing
• Transport properties of quantum dots with hard walls
• Higher-Order Results for the Relation between Channel Conductance and the Coulomb Blockade for Two Tunnel-Coupled Quantum Dots

Cited by in corpus (7)

• Two path transport measurements on a triple quantum dot
• Phase coherence in the inelastic cotunneling regime
• Coherent probing of excited quantum dot states in an interferometer
• Multiple layer local oxidation for fabricating semiconductor nanostructures
• Spin Blockade in Capacitively Coupled Quantum Dots
• Negative differential conductance in quantum dots in theory and experiment
• Highly Tunable Hybrid Quantum Dots with Charge Detection