Intrinsic hole localization mechanism in magnetic semiconductors

Abstract

The interplay between clustering and exchange coupling in magnetic semiconductors for the prototype (Ga_{1-x},Mn_x)As with manganese concentrations x of 1/16 and 1/32 in the interesting experimental range is investigated. For x ~ 6 %, when all possible arrangements of two atoms within a large supercell are considered, the clustering of Mn atoms at nearest-neighbour Ga sites is energetically preferred. As shown by spin density analysis, this minimum energy configuration localizes further one hole and reduces the effective charge carrier concentration. Also the exchange coupling constant increases to a value corresponding to lower Mn concentrations with decreasing inter Mn distance.

Accepted for publication in Journal of Physics: Condensed Matter

References in corpus (9)

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Cited by in corpus (8)

• Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells
• Electronic and magnetic properties of substitutional Mn clusters in (Ga,Mn)As
• Cr doped III-V nitrides: potential candidates for spintronics
• High Curie temperatures in (Ga,Mn)N from Mn clustering
• Diffusion and clustering of substitutional Mn in (Ga,Mn)As
• Antiferromagnetic order in (Ga,Mn)N nanocrystals: A density functional theory study
• First-principles calculations of the magnetic properties of (Cd,Mn)Te nanocrystals
• Electronic structure of Diluted Magnetic Semiconductors $G{a}_{1-x}M{n}_{x}N$ and $G{a}_{1-x}C{r}_{x}N$