Local Manipulation of Nuclear Spin in a Semiconductor Quantum Well

Abstract

The shaping of nuclear spin polarization profiles and the induction of nuclear resonances are demonstrated within a parabolic quantum well using an externally applied gate voltage. Voltage control of the electron and hole wave functions results in nanometer-scale sheets of polarized nuclei positioned along the growth direction of the well. RF voltages across the gates induce resonant spin transitions of selected isotopes. This depolarizing effect depends strongly on the separation of electrons and holes, suggesting that a highly localized mechanism accounts for the observed behavior.

18 pages, 4 figures

References in corpus (5)

• Coupled quantum dots as quantum gates
• Long-lived memory for mesoscopic quantum bits
• Optical manipulation of nuclear spin by a two-dimensional electron gas
• Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells
• Electric field tunability of nuclear and electronic spin dynamics due to the hyperfine interaction in semiconductor nanostructures

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