Electric field tunability of nuclear and electronic spin dynamics due to the hyperfine interaction in semiconductor nanostructures

Abstract

We present formulas for the nuclear and electronic spin relaxation times due to the hyperfine interaction for nanostructed systems and show that the times depend on the square of the local density of electronic states at the nuclear position. A drastic sensitivity (orders of magnitude) of the electronic and nuclear spin coherence times to small electric fields is predicted for both uniformly distributed nuclear spins and for $\d$-doped layers of specific nuclei. This sensitivity is robust to nuclear spin diffusion.

4 pages, 3 figures, revtex4

References in corpus (2)

• Electron spin decoherence in quantum dots due to interaction with nuclei
• Optical properties of structurally-relaxed Si/SiO${}_2$ superlattices: the role of bonding at interfaces

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• Nuclear magnetic resonance probes for the Kondo scenario for the 0.7 feature in semiconductor quantum point contact devices