Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition

Abstract

We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.

10 pages, 4 figures

References in corpus (5)

• Superconductivity in Dense $Mg{B}_2$ Wires
• In situ epitaxial MgB2 thin films for superconducting electronics
• Thermodynamics of the Mg-B system: Implications for the deposition of MgB2 thin films
• Synthesis and Stoichiometry of MgB2
• Effects of stoichiometry, purity, etching and distilling on resistance of MgB2 pellets and wire segments

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