Study of the formation and decay of electron-hole plasma clusters in a direct-gap semiconductor CuCl
arXiv:cond-mat/0304027 · doi:10.1088/0256-307X/20/10/350
Abstract
The master equation for the cluster-size distribution function is solved numerically to investigate the electron-hole droplet formation claimed to be discovered in the direct-gap CuCl excited by picosecond laser pulses [Nagai {\em et al.}, Phys. Rev. Lett. {\bf 86}, 5795 (2001); J. Lumin. {\bf 100}, 233 (2002)]. Our result shows that for the excitation in the experiment, the average number of pairs per cluster (ANPC) is only around 5.2, much smaller than that (10 typically for Ge) of the well studied electron-hole droplet in indirect-gap semiconductors such as Ge and Si.
arXiv comment3 pages, 3 figures in eps format