Critical Current Density and Resistivity of MgB2 Films
arXiv:cond-mat/0302017 · doi:10.1063/1.1590734
Abstract
The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the "reduced effective area" argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2.
11 pages, 3 figures
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- Comparative study of in situ and ex situ MgB2 films deposited by pulsed laser deposition
- Electron diffusivities in MgB2 from point contact spectroscopy
- Off-axis MgB2 films using an in situ annealing pulsed laser deposition method
- Effect of oxygen incorporation on normal and superconducting properties of MgB2 films
- Probe to properties of MgB2 thick film on silicon carbide substrate
- Thick MgB2 film with (101) oriented micro-crystals
- Roles of intrinsic anisotropy and pi-band pairbreaking effects on critical currents in tilted c-axis MgB2 films probed by magneto-optical and transport measurements