Spin Current Generation and Detection in the Presence of AC Gate

Abstract

We predict that in a narrow gap III-V semiconductor quantum well or a wire an observable spin current can be generated with a time dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated AC current are discussed. An all-electric method of spin current detection is suggested, which measures the voltage on the gate in the vicinity of a 2D electron gas carrying a time dependent spin current. Both the generation and detection do not involve any optical or magnetic mediators.

4 pages, 2 figures, final version to be published in Phys. Rev. B

Cited by in corpus (6)

• Pure spin current from one-photon absorption of linearly polarized light in noncentrosymmetric semiconductors
• Generation of spin current and polarization under dynamic gate control of spin-orbit interaction in low-dimensional semiconductor systems
• Strain-Induced Coupling of Spin Current to Nanomechanical Oscillations
• Lewis-Riesenfeld approach to the solutions of Schrodinger equation in the presence of the presence of a time-dependent linear potential
• Nonlocal pure spin current injection via quantum pumping and crossed Andreev reflection
• DC Spin Current Generation in a Rashba-type Quantum Channel