DC Spin Current Generation in a Rashba-type Quantum Channel

Abstract

We propose and demonstrate theoretically that resonant inelastic scattering (RIS) can play an important role in dc spin current generation. The RIS makes it possible to generate dc spin current via a simple gate configuration: a single finger-gate that locates atop and orients transversely to a quantum channel in the presence of Rashba spin-orbit interaction. The ac biased finger-gate gives rise to a time-variation in the Rashba coupling parameter, which causes spin-resolved RIS, and subsequently contributes to the dc spin current. The spin current depends on both the static and the dynamic parts in the Rashba coupling parameter, ${\alpha }_0$ and ${\alpha }_1$, respectively, and is proportional to ${\alpha }_0{\alpha }_1^2$. The proposed gate configuration has the added advantage that no dc charge current is generated. Our study also shows that the spin current generation can be enhanced significantly in a double finger-gate configuration.

4 pages,4 figures

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• Dissipationless Quantum Spin Current at Room Temperature
• Spin battery operated by ferromagnetic resonance
• Experimental Realization of a Quantum Spin Pump
• An Adiabatic Quantum Pump of Spin Polarized Current
• A spin-cell for spin current
• Pumping spin with electrical fields
• Spin Current Generation and Detection in the Presence of AC Gate
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Cited by in corpus (5)

• Effect of gate-driven spin resonance on the conductance of a one-dimensional quantum wire
• Pure spin current generation in a Rashba-Dresselhaus quantum channel
• Spin-orbit coupling effect on the persistent currents in mesoscopic ring with an Anderson impurity
• Generalized Kubo formula for spin transport: A theory of linear response to non-Abelian fields
• Finger-gate manipulated quantum transport in a semiconductor narrow constriction with spin-orbit interactions and Zeeman effect