Dynamical brittle fractures of nanocrystalline silicon using large-scale electronic structure calculations
arXiv:cond-mat/0210366 · doi:10.1143/JPSJ.72.2429
Abstract
A hybrid scheme between large-scale electronic structure calculations is developed and applied to nanocrystalline silicon with more than 10 atoms. Dynamical fracture processes are simulated under external loads in the [001] direction. We shows that the fracture propagates anisotropically on the (001) plane and reconstructed surfaces appear with asymmetric dimers. Step structures are formed in larger systems, which is understood as the beginning of a crossover between nanoscale and macroscale samples.
10 pages, 4 figures
References in corpus (1)
Cited by in corpus (13)
- O(N) methods in electronic structure calculations
- Linear Algebraic Calculation of Green's function for Large-Scale Electronic Structure Theory
- Efficient linear scaling method for computing the thermal conductivity of disordered materials
- Krylov Subspace Method for Molecular Dynamics Simulation based on Large-Scale Electronic Structure Theory
- Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure alculations; surface reconstruction, step and bending
- Million-atom molecular dynamics simulation by order-N electronic structure theory and parallel computation
- Large-scale electronic structure theory for simulating nanostructure process
- Domain boundary formation in helical multishell gold nanowire
- Efficient and Accurate Linear Algebraic Methods for Large-scale Electronic Structure Calculations with Non-orthogonal Atomic Orbitals
- Development of simulation package 'ELSES' for extra-large-scale electronic-structure calculation
- Large-scale electronic-structure theory and nanoscale defects formed in cleavage process of silicon
- Accuracy control in ultra-large-scale electronic structure calculation
- A hierarchical research by large-scale and ab initio electronic structure theories -- Si and Ge cleavage and stepped (111)-2x1 surfaces --