Transport anisotropy in biaxially strained La(2/3)Ca(1/3)MnO(3) thin films
arXiv:cond-mat/0207730 · doi:10.1103/PhysRevB.66.052414
Abstract
Due to the complex interplay of magnetic, structural, electronic, and orbital degrees of freedom, biaxial strain is known to play an essential role in the doped manganites. For coherently strained La(2/3)Ca(1/3)MnO(3) thin films grown on SrTiO(3) substrates, we measured the magnetotransport properties both parallel and perpendicular to the substrate and found an anomaly of the electrical transport properties. Whereas metallic behavior is found within the plane of biaxial strain, for transport perpendicular to this plane an insulating behavior and non-linear current-voltage characteristics (IVCs) are observed. The most natural explanation of this anisotropy is a strain induced transition from an orbitally disordered ferromagnetic state to an orbitally ordered state associated with antiferromagnetic stacking of ferromagnetic manganese oxide planes.
5 pages, 4 figures
References in corpus (1)
Cited by in corpus (5)
- Laser molecular beam epitaxy of ZnO thin films and heterostructures
- Electronic Phase Separation in Manganite/Insulator Interfaces
- Modelling of strain effects in manganite films
- Substrate-induced strain effects on Pr_{0.6}Ca_{0.4}MnO_{3} films
- Anisotropy in the thermal hysteresis of resistivity and charge density wave nature of single crystal SrFeO3-delta: X-ray absorption and photoemission studies