p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd${}_{1-x}$Mn${}_x$Te quantum wells

Abstract

We present a study of p-type doping of CdTe and Cd${}_{1-x}$Mn${}_x$Te quantum wells from surface states. We show that this method is as efficient as usual modulation doping with nitrogen acceptors, and leads to hole densities exceeding $2\times 10^{11}$ cm${}^{-2}$. Surface doping was successfully applied to obtain carrier-induced ferromagnetism in a Cd${}_{1-x}$Mn${}_x$Te quantum well. The observed temperature dependence of photoluminescence spectra, and the critical temperature, correspond well to those previously reported for ferromagnetic quantum wells doped with nitrogen.

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References in corpus (2)

• Theory of Ferromagnetism in Diluted Magnetic Semiconductor Quantum Wells
• Ferromagnetism and Canted Spin Phase in AlAs/GaMnAs Single Quantum Wells: Monte Carlo Simulation

Cited by in corpus (5)

• Magnetization dynamics down to zero field in dilute (Cd,Mn)Te quantum wells
• Photoluminescence of p-doped quantum wells with strong spin splitting
• Theory of spin waves in diluted-magnetic-semiconductor quantum wells
• Magnetic ion relaxation time distribution within a quantum well
• Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale