Magnetic ion relaxation time distribution within a quantum well

Abstract

Time-resolved optically detected magnetic resonance (ODMR) is a valuable technique to study the local deformation of the crystal lattice around magnetic ion as well as the ion spin relaxation time. Here we utilize selective Mn-doping to additionally enhance the inherent locality of the ODMR technique. We present the time-resolved ODMR studies of single {(Cd,Mg)Te/(Cd,Mn)Te} quantum wells (QWs) with manganese ions located at different positions along the growth axis -- in the center or on the sides of the quantum well. We observe that spin-lattice relaxation of Mn${}^{2+}$ significantly depends on the ion-carrier wavefunction overlap at low-magnetic fields. Interestingly, the effect is clearly observed in spite of very low carrier density, which suggests the potential for control of the Mn${}^{2+}$ ion relaxation rate by means of the electric field in future experiments.

References in corpus (4)

• p-Type doping of II-VI heterostructures from surface states: application to ferromagnetic Cd${}_{1-x}$Mn${}_x$Te quantum wells
• Magneto-optics of excitons interacting with magnetic ions in CdSe/CdMnS colloidal nanoplatelets
• Multiple transfer of angular momentum quanta from a spin-polarized hole to magnetic ions in ZnMnSe/ZnBeSe quantum wells
• Angle-resolved optically detected magnetic resonance as a tool for strain determination in nanostructures

Cited by in corpus (1)

• Wurtzite MnSe as a barrier for CdSe quantum wells with built-in electric field