Quantum wells with atomically smooth interfaces
arXiv:cond-mat/0205183 · doi:10.1063/1.1490144
Abstract
By a cleaved-edge overgrowth method with molecular beam epitaxy and a (110) growth-interrupt-anneal, we have fabricated a GaAs quantum well exactly 30 monolayers thick bounded by atomically smooth AlGaAs hetero-interfaces without atomic roughness. Micro-photoluminescence imaging of this quantum well indeed shows spatially uniform and spectrally sharp emission over areas of several tens of m in extent. By adding a fractional GaAs monolayer to our quantum well we are able to study the details of the atomic step-edge kinetics responsible for flat interface formation.
4 pages, 3 figures, revTex4
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