Effects of an electronic topological transition for anisotropic low-dimensional superconductors

Abstract

We study the superconducting properties of a two-dimensional superconductor in the proximity to an electronic topological transition (ETT). In contrast to the 3D case, we find that the superconducting gap at T=0, the critical temperature Tc, and the impurity scattering rate are characterized by a nonmonotonic behavior, with maxima occurring close to the ETT. We derive analytical expressions for the value of such maxima both in the s-wave and in the d-wave case. Such expressions are in good qualitative agreement with the phenomenological trend recently observed for Tc^max as a function of the hopping ratio t'/t across several cuprate compounds. We further analyze the effect of an ETT on the Ginzburg-Landau stiffness eta. Instead of vanishing at the ETT, as could be expected, thus giving rise to an increase of the fluctuation effects, in the case of momentum-independent electron-electron interaction, we find eta different from 0, as a result of an integration over the whole Fermi surface.

arXiv commentto be published in Phys. Rev. B

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• Effects of proximity to an electronic topological transition on normal state transport properties of the high-Tc superconductors
• Effect of uniaxial strain on the reflectivity of graphene
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• Multiband superconductors close to a 3D-2D electronic topological transition
• Linear response theory around a localized impurity in the pseudogap regime of an anisotropic superconductor: precursor pairing vs the d-density-wave scenario