Strain-induced quantum ring hole states in a gated vertical quantum dot
arXiv:cond-mat/0204457 · doi:10.1103/PhysRevLett.89.096804
Abstract
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot, which can confine hole states exhibiting quantum ring characteristics. The magnetotunneling spectroscopy exhibits the predicted periodicity of energy states in ϕ/\phi0, but the magnitude of the energy shifts is larger than predicted by simple ring theory. Our results suggest a new way to fabricate and study quantum ring structures.
16 pages, 4 figures