A 'p-n' diode with hole and electron-doped lanthanum manganite
arXiv:cond-mat/0108163 · doi:10.1063/1.1409592
Abstract
The hole-doped manganite La0.7Ca0.3MnO3 and the electron-doped manganite La0.7Ce0.3MnO3 undergo an insulator to metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have successfully fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e. in the semiconducting regime, it exhibits asymmetric current-voltage (I-V) characteristics akin to a p-n diode. The observed asymmetry in the I-V characteristics disappears at low temperatures where both the manganite layers are metallic. To the best of our knowledge, this is the first report of such a p-n diode, using the polaronic semiconducting regime of doped manganites.
PostScript text and 2 figures, to be published in Appl. Phys. Lett.
References in corpus (3)
Cited by in corpus (9)
- Direct observation of electron doping in La0.7Ce0.3MnO3 using x-ray absorption spectroscopy
- Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance
- Electron-Hole Liquids in Transition Metal Oxide Heterostructures
- Transport, magnetic, and structural properties of LaCeMnO thin films. Evidence for hole-doping
- Electronic structure and transport properties of La_0.7Ce_0.3MnO_3
- Electrical-transport characteristics of as-grown and oxygen-reduced LaCeMnO films: calculation of hopping energies, Mn valences, and carrier localization lengths
- Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces
- Epitaxial stabilization of ultra thin films of electron doped manganites
- Mn/Mn state of LaCeMnO by oxygen reduction and photodoping