MgB2 tunnel junctions and 19 K low-noise dc superconducting quantum interference devices
arXiv:cond-mat/0107478 · doi:10.1063/1.1424465
Abstract
Point contact junctions made from two pieces of MgB2 can be adjusted to exhibit either superconductor-insulator-superconductor (SIS) or superconductor-normal metal-superconductor (SNS) current-voltage characteristics. The SIS characteristics are in good agreement with the standard tunneling model for s-wave superconductors, and yield an energy gap of (2.02 +/- 0.08) meV. The SNS characteristics are in good agreement with the predictions of the resistively-shunted junction model. DC Superconducting QUantum Interference Devices made from two SNS junctions yield magnetic field noise as low as 35 fT/Hz^{1/2} at 19 K.
4 pages, 4 figures
References in corpus (5)
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Cited by in corpus (11)
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- A Directly Coupled Superconducting Quantum Interference Device Magnetometer Fabricated in Magnesium Diboride by Focused Ion Beam
- Tunnel junctions on as-grown superconducting MgB2 thin films
- Point-Contact Spectroscopy in MgB_2: from Fundamental Physics to Thin-Film Characterization
- MgB2 radio-frequency superconducting quantum interference device prepared by atomic force microscope lithography
- Josephson effects in MgB2 meta masked ion damage junctions
- Highly tunable NbTiN Josephson junctions fabricated with focused helium ion beam