Josephson effects in MgB2 meta masked ion damage junctions
arXiv:cond-mat/0206207 · doi:10.1109/TASC.2003.814157
Abstract
Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB with T of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB metal masked ion damage junctions are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.
12 pages, 4 figures, RevTeX4, submitted to APL
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