MgB2 superconductor thin films on Si and Al2O3 substrates

Abstract

Thin films of MgB2 superconductor were prepared by three different procedures on sapphire and silicon substrates. Boron thin films, ex-situ annealed in magnesium vapour, resulted in textured polycrystalline films with crystal dimensions below about 1000 nm, onset critical temperature Tcon near 39 K and width of phase transition about 1 K. Both, ex-situ and in-situ annealed co-deposited boron and magnesium thin films on sapphire and silicon substrates give smooth nanocrystalline films. DC properties of nanocrystalline MgB2 films co-deposited on silicon substrate reached Tcon = 33 K and zero resistance Tco = 27 K, the highest values received until now on Si substrates. In addition, microwave analyses prove the existence of superconducting parts of the film below 39 K. This result confirms the possibility to synthesise nanocrystalline superconducting MgB2 thin films on silicon substrate with critical temperature near 39 K, prepared by vacuum co-deposition of boron and magnesium films.

7 pages

References in corpus (1)

• Superconducting thin films of MgB2 on (001)-Si by pulsed laser deposition

Cited by in corpus (8)

• A New Approach for the Fabrication of MgB2 Superconducting Tape with Large In-field Transport Critical Current Density
• Time-resolved dynamics of the superconducting two-gap state in MgB2 thin films
• Growth of superconducting MgB2 thin films via postannealing techniques
• Superconducting properties of MgB2 thin films prepared on flexible plastic substrates
• Transverse voltage in zero external magnetic fields, its scaling and violation of the time reversal symmetry in MgB2
• A study of Mg adsorption on Si(001) surface from first principles
• Electrical and structural properties of MgB2 films prepared by sequential deposition of B and Mg on the NbN buffered Si(100) substrate
• Scaling of resistivities and guided vortex motion in MgB2 thin films