In-situ Magnesium Diboride Superconducting Thin Films grown by Pulsed Laser Deposition

Abstract

Superconducting thin films of MgB2 were deposited by Pulsed Laser Deposition on magnesium oxide and sapphire substrates. Samples grown at 450C in an argon buffer pressure of about 10-2 mbar by using a magnesium enriched target resulted to be superconducting with a transition temperature of about 25 K. Film deposited from a MgB2 sintered pellet target in ultra high vacuum conditions showed poor metallic or weak semiconducting behavior and they became superconducting only after an ex-situ annealing in Mg vapor atmosphere. Up to now, no difference in the superconducting properties of the films obtained by these two procedures has been evidenced.

10 pages, 4 figures

References in corpus (1)

• Boron Isotope Effect in Superconducting MgB${}_2$

Cited by in corpus (5)

• Growth of c-oriented MgB2 thin films by Pulsed Laser Deposition: structural characterization and electronic anisotropy
• Growth methods of c-axis oriented MgB2 thin films by pulsed laser deposition
• High quality MgB2 thin films in-situ grown by dc magnetron sputtering
• In situ annealing of superconducting MgB2 films prepared by pulsed laser deposition
• Anisotropy in c-oriented MgB2 thin films grown by Pulsed Laser Deposition