Quantum kinetic theory of shift current electron pumping in semiconductors

Abstract

We develop a theory of laser beam generation of shift currents in non-centrosymmetric semiconductors. The currents originate when the excited electrons transfer between different bands or scatter inside these bands, and asymmetrically shift their centers of mass in elementary cells. Quantum kinetic equations for hot-carrier distributions and expressions for the induced currents are derived by nonequilibrium Green functions. In applications, we simplify the approach to the Boltzmann limit and use it to model laser-excited GaAs in the presence of LO phonon scattering. The shift currents are calculated in a steady-state regime.

23 pages, 5 figures (Latex)

References in corpus (1)

• Coherent Control of Photocurrents in Graphene and Carbon Nanotubes

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• Spatio-temporal dynamics of shift current quantum pumping by femtosecond light pulse
• Local photo-excitation of shift current in noncentrosymmetric systems
• Effects of strong correlations on the nonlinear response in Weyl-Kondo semimetals
• Quantum Kinetics of the Magneto Photo Galvanic Effect
• Ultrafast shift and rectification photocurrents in GaAs quantum wells: Excitation intensity dependence and the importance of bandmixing
• Berry-electrodynamics - Anomalous drift and pumping from time-dependent Berry connection
• Anisotropic Excitons and their Contributions to Shift Current Transients in Bulk GaAs
• Nonlinear Time Domain Spectroscopy Near a Band Inversion