Nonlinear transport theory for hybrid normal-superconducting devices

Abstract

We report a theory for analyzing nonlinear DC transport properties of mesoscopic or nanoscopic normal-superconducting (N-S) systems. Special attention was paid such that our theory satisfies gauge invariance. At the linear transport regime and the sub-gap region where the familiar scattering matrix theory has been developed, we provide confirmation that our theory and the scattering matrix theory are equivalent. At the nonlinear regime, however, our theory allows the investigation of a number of important problems: for N-S hybrid systems we have derived the general nonlinear current-voltage characteristics in terms of the scattering Green's function, the second order nonlinear conductance at the weakly nonlinear regime, and nonequilibrium charge pile-up in the device which defines the electrochemical capacitance coefficients.

References in corpus (4)

• Nonlinear I-V Characteristics of a Mesoscopic Conductor
• Distribution functions and current-correlations in normal-metal--superconductor hetero-structures
• Resonant Andreev reflections in superconductor-carbon-nanotube devices
• Nonlinear Quantum Capacitance

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• Spin-dependent thermoelectric phenomena in a quantum dot attached to ferromagnetic and superconducting electrodes
• Cross thermoelectric coupling in normal-superconductor quantum dots
• Quantization of adiabatic pumped charge in the presence of superconducting lead
• The charge and low-frequency response of normal-superconducting heterostructures
• A hybrid superconducting quantum dot acting as an efficient charge and spin Seebeck diode
• Carbon nanotube-based quantum pump in the presence of superconducting lead
• Novel non-local effects in three-terminal hybrid devices with quantum dot
• Nonlocal pure spin current injection via quantum pumping and crossed Andreev reflection
• Optimization of a three-terminal non-linear heat nano-engine
• Statistical correlation for the composite Boson
• Conductance matrix symmetries of multiterminal semiconductor-superconductor devices