Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)
arXiv:cond-mat/0008083 · doi:10.1103/PhysRevB.63.125314
Abstract
This paper withdrawn by the authors due to errors in the TEM measurements of the densities and sizes of small islands.
This paper withdrawn by the authors due to errors in the TEM measurements of the densities and sizes of small islands
Cited by in corpus (4)
- Modeling and Simulation of Strained Heteroepitaxial Growth
- Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing
- Lattice matched Volmer-Weber growth of FeSi on GaAs(001) -- the influence of the growth rate
- Electron localization in self-assembled Si/Ge(111) quantum dots