Grain boundary effects on magnetotransport in bi-epitaxial films of LaSrMnO
arXiv:cond-mat/0007194 · doi:10.1103/PhysRevB.62.3333
Abstract
The low field magnetotransport of LaSrMnO (LSMO) films grown on SrTiO substrates has been investigated. A high qualtity LSMO film exhibits anisotropic magnetoresistance (AMR) and a peak in the magnetoresistance close to the Curie temperature of LSMO. Bi-epitaxial films prepared using a seed layer of MgO and a buffer layer of CeO display a resistance dominated by grain boundaries. One film was prepared with seed and buffer layers intact, while a second sample was prepared as a 2D square array of grain boundaries. These films exhibit i) a low temperature tail in the low field magnetoresistance; ii) a magnetoconductance with a constant high field slope; and iii) a comparably large AMR effect. A model based on a two-step tunneling process, including spin-flip tunneling, is discussed and shown to be consistent with the experimental findings of the bi-epitaxial films.
arXiv commentREVTeX style; 14 pages, 9 figures. Figure 1 included in jpeg format (zdf1.jpg); the eps was huge. Accepted to Phys. Rev. B
References in corpus (4)
Cited by in corpus (9)
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